We are pleased to inform you that NSN part AT28HC291-55LM 883 is now available and ready for immediate shipment. Part AT28HC291-55LM 883 is manufactured by Atmel Corporation. It carries the Federal Supply Group 5962 Microcircuits Electronic of Cage Code is 1FN41. If you’re looking for a quick and competitive quote for AT28HC291-55LM 883 part, all you have to do is fill out the Request for Quote (RFQ) form below and one of our amazing sales representatives will get back you with your quote in 15 minutes or less.
Part Number: AT28HC291-55LM 883 | Item Name: Microcircuit Memory | NSN: 5962-01-358-4068 (5962013584068) | NIIN : 013584068 |
CAGE Code: 1fn41 | FSC: FSC 5962 Microcircuits Electronic | Manufacturer: Atmel Corporation | |
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-358-4068 Item Description: Microcircuit Memory | 5962 | 013584068 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
At28hc291-55lm 883 | 2 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING440 0 MILLIWATTS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ERASABLE AND ELECTROSTATIC SENSITIVE |
MEMORY | CRHL | BIT QUANTITY65536 |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAQ | BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC80 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC6 00 INPUT PICOFARADS MAXIMUM AND 12 00 OUTPUT PICOFARADS MAXIMUM |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC1000 00 NANOSECONDS MAXIMUM DELAY |
MEMORY | CZER | MEMORY DEVICE TYPEPROM |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CSWJ | WORD QUANTITY8192 |
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